Semiconductor device with memory banks and sense amplifier arrays

ABSTRACT

A semiconductor device may include a plurality of memory banks arranged in a first direction; an address decoder arranged at one side of the memory banks; a plurality of local sense amplifier arrays arranged under each of the memory banks; a plurality of first input/output lines connected between the memory banks and the local sense amplifier arrays corresponding to each of the memory banks; and at least one second input/output line connected to the local sense amplifier arrays and extended in the first direction.

CROSS-REFERENCES TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119(a) toKorean patent application number 10-2018-0002321, filed on Jan. 8, 2018,in the Korean Intellectual Property Office, which is incorporated hereinby reference in its entirety.

BACKGROUND 1. Technical Field

Various embodiments of the present invention generally relate to asemiconductor device. Particularly, the embodiments relate to asemiconductor memory device.

2. Related Art

Generally, a semiconductor memory device such as a dynamic random accessmemory (DRAM) may include a plurality of memory cell arrays. The memorycell arrays may include memory cells for storing data. The memory cellmay be accessed by controlling a word line and a bit line.

As the semiconductor memory device becomes more highly integrated, itmay be required to provide the semiconductor memory device with biggerdata storage capacity and a smaller size. In order to store the massivedata, it may be required to provide the memory cell array with a largesize. However, the large size of the memory cell array may hinder thehigh integration of the semiconductor memory device.

SUMMARY

Example embodiments may provide a semiconductor device capable ofreducing power consumption and increasing an operational speed.

In an embodiment of the present disclosure, a semiconductor device mayinclude: a plurality of memory banks arranged in a first direction; anaddress decoder arranged at one side of the memory banks; a plurality oflocal sense amplifier arrays arranged under each of the memory banks; aplurality of first input/output lines connected between the memory banksand the local sense amplifier arrays corresponding to each of the memorybanks; and at least one second input/output line connected to the localsense amplifier arrays and extended in the first direction.

In an embodiment of the present disclosure, a semiconductor device mayinclude: a plurality of MATs including a plurality of memory cells, theMATs adjacent to each other in a first direction; a plurality of firstsense amplifier arrays arranged between the MATs, each of the firstsense amplifier arrays including a plurality of first sense amplifiers;and a plurality of column selection signal lines extended on the firstsense amplifier arrays in a second direction substantially perpendicularto the first direction to transmit column selection signals to the firstsense amplifiers.

In an embodiment of the present disclosure, a semiconductor device mayinclude: a MAT including a plurality of memory cells; a plurality ofsense amplifier arrays arranged at one side of the MAT, each of thefirst sense amplifier arrays including a plurality of sense amplifiers;a plurality of first input/output lines arranged on the sense amplifierarray, spaced apart from each other in a first direction and connectedwith the at least one sense amplifier through a switching element; aplurality of column selection signal lines for transmitting a columnselection signal to the switching element; and a plurality of secondinput/output lines connected to the first input/output lines through acontact and extended on the MAT in a second direction substantiallyperpendicular to the first direction.

In an embodiment of the present disclosure, a semiconductor device mayinclude: memory cell groups arranged in a first direction; normal senseamplifier arrays arranged between the memory cell groups, and suitablefor amplifying data of neighboring ones among the memory cell groupsaccording to column selection signals; first and second edge senseamplifier arrays arranged on uppermost and lowermost ones among thememory cell groups, respectively, and suitable for amplifying data ofthe uppermost and lowermost memory cell groups according to columnselection signals; column selection signal lines extended on the normalsense amplifier arrays in a second direction, and suitable fortransferring the column selection signals to the normal sense amplifierarrays; segment input/output lines substantially coplanar with thecolumn selection signal lines, and suitable for transferring theamplified data; local input/output lines extended in the first directionon a higher level than the segment input/output lines, and suitable fortransferring the amplified data provided through the segmentinput/output lines; local sense amplifier arrays arranged under thememory cell groups, and suitable for further amplifying the dataprovided through the local input/output lines; and global input/outputlines arranged on a higher level than the local input/output lines, andsuitable for transferring the data amplified by the local senseamplifier arrays.

According to example embodiments, a quantity of data, which may besimultaneously inputted/outputted into/from the single MAT, may beincreased by increasing numbers of the data input/output lines in thesingle MAT.

Further, because the quantity of the data simultaneouslyinputted/outputted into/from the single MAT may be increased, a memorysize driven when inputting/outputting the data may have a small size sothat the semiconductor device may have low power consumption andimproved operational speed.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and advantages of the subjectmatter of the present disclosure will be more clearly understood fromthe following detailed description taken in conjunction with theaccompanying drawings, in which:

FIG. 1 is a block diagram illustrating a semiconductor system inaccordance with an embodiment of the present disclosure;

FIG. 2 is a block diagram illustrating a semiconductor device inaccordance with an embodiment of the present disclosure;

FIG. 3 is a view illustrating a memory region in FIG. 2;

FIG. 4 is a view illustrating a portion “A” in FIG. 3;

FIG. 5 is a plan layout view illustrating a column selection signal lineand data input/output lines SIO, LIO, and GIO in accordance with anembodiment of the present disclosure;

FIG. 6 is a view illustrating connection relations between a senseamplifier, a bit line, a column selection signal line, and datainput/output lines in accordance with an embodiment of the presentdisclosure;

FIGS. 7A to 7C are plan layout views illustrating a segment input/outputline, a local input/output line, and a column selection signal line inaccordance with embodiments of the present disclosure;

FIG. 8 is a view illustrating a data register;

FIG. 9 is a circuit diagram illustrating a normal sense amplifier;

FIG. 10A is a circuit diagram illustrating an edge sense amplifier;

FIG. 10B is a timing chart illustrating operations of an edge senseamplifier;

FIG. 11 is a view illustrating an electronic system including thesemiconductor device in accordance with an embodiment of the presentdisclosure;

FIG. 12 is a view illustrating a system including the semiconductordevice in accordance with an embodiment of the present disclosure;

FIG. 13 is a view illustrating a memory module including thesemiconductor device in accordance with an embodiment of the presentdisclosure;

FIG. 14 is a block diagram illustrating a memory system including thesemiconductor device in accordance with an embodiment of the presentdisclosure;

FIG. 15 is a block diagram illustrating a computing system including thememory system in FIG. 14; and

FIG. 16 is a block diagram illustrating a user system including thesemiconductor device in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

Various embodiments of the present invention are described below in moredetail with reference to the accompanying drawings. We note, however,that the present invention may be embodied in different forms andvariations, and should not be construed as being limited to theembodiments set forth herein. Rather, the described embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the present invention to those skilled in the art to whichthis invention pertains. Throughout the disclosure, like referencenumerals refer to like parts throughout the various figures andembodiments of the present invention. It is noted that reference to “anembodiment” does not necessarily mean only one embodiment, and differentreferences to “an embodiment” are not necessarily to the sameembodiment(s).

The drawings are not necessarily to scale and, in some instances,proportions may have been exaggerated in order to clearly illustratefeatures of the embodiments.

It will be further understood that when an element is referred to asbeing “connected to”, or “coupled to” another element, it may bedirectly on, connected to, or coupled to the other element, or one ormore intervening elements may be present. In addition, it will also beunderstood that when an element is referred to as being “between” twoelements, it may be the only element between the two elements, or one ormore intervening elements may also be present.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the presentinvention.

As used herein, singular forms may include the plural forms as well andvice versa, unless the context clearly indicates otherwise.

The present disclosure is described herein with reference tocross-section and/or plan illustrations of idealized embodiments of thepresent disclosure. However, embodiments of the present disclosureshould not be construed as limiting the inventive concept. Although afew embodiments of the present disclosure will be shown and described,it will be appreciated by those of ordinary skill in the art thatchanges may be made in these embodiments without departing from theprinciples and spirit of the present disclosure.

FIG. 1 is a block diagram illustrating a semiconductor system 10 inaccordance with an embodiment of the present disclosure.

Referring to FIG. 1, the semiconductor system 10 may include asemiconductor device 100 and a controller 200.

In order to perform operations such as a read operation, a writeoperation, a refresh operation, etc., requested from a host device, thecontroller 200 may control operations of the semiconductor device 100.The controller 200 may control the operations of the semiconductordevice 100 by transmitting commands CMDs and addresses ADDRs to thesemiconductor device 100 in response to the requests from the hostdevice. Data DATA may be transmitted between the controller 200 and thesemiconductor device 100 when performing the read operation and thewrite operation on memory cells (not shown) of the semiconductor device100.

The semiconductor device 100 may include a volatile memory device and anon-volatile memory device. For example, the volatile memory device mayinclude a static random access memory (SRAM), a dynamic random accessmemory (DRAM), a synchronous DRAM (SDRAM), etc. For example, thenon-volatile memory device may include a read only memory (ROM), aprogrammable ROM (PROM), an electrically erasable and programmable ROM(EEPROM), an erasable and programmable ROM (EPROM), a phase changeableRAM (PRAM), a magnetic RAM (MRAM), a resistive RAM (RRAM), aferroelectric RAM (FRAM), etc.

FIG. 2 is a block diagram illustrating the semiconductor device 100 inFIG. 1.

Referring to FIG. 2, the semiconductor device 100 may include a memoryregion 110, a raw/column decoder 120, a data input/output circuit 130, aclock buffer 140, a command buffer 150, an address buffer 160, and adata buffer 170. However, the configuration of the semiconductor device100 is not limited to the above elements.

The memory region 110 may store the data transmitted from the controller200. The memory region 110 may include a plurality of memory bank groupsBG1 to BGm (See FIG. 3). Each of the memory bank groups BG1 to BGm mayinclude a plurality of memory banks BANK1 to BANKn (See FIG. 3). Each ofthe memory banks BANK1 to BANKn may include a plurality of MATs MAT1 toMATi (See FIG. 4). Each of the MATs MAT1 to MATi may include a pluralityof memory cells.

The memory cells in each of the MATs MAT1 to MATi may be connected to anintersection between a plurality of word lines (not shown) and aplurality of bit lines (not shown). Each of the memory cells may includea data storage element (not shown) for storing the data, and an accesselement (not shown) connected to the data storage element, the word lineand the bit line. The access element may include a transistor. However,the present invention is not limited thereto. For example, the accesselement may include other elements in place of the transistor. Further,the data storage element may include a capacitor. However, the presentinvention is not limited thereto. For example, the data storage elementmay include other elements in place of the capacitor.

For example, when a word line of the plurality of word lines and a bitline of the plurality of bit lines are activated, the access elementconnected to the activated word line and the activated bit line may beturned-on. When the access element is turned-on, the data may be storedin a corresponding data storage element or read from the correspondingdata storage element.

The semiconductor device 100 may perform various operations such as thewrite operation, the read operation, the refresh operation, etc., by thecontrols of the controller 200. The semiconductor device 100 may storethe data received from the controller 200 in the memory region 110during the write operation. The semiconductor device 100 may read thedata stored in the memory region 110 and transmit the read data to thecontroller 200 during the read operation.

A length of the word line activated in the memory region 110 of thesemiconductor device 100 may be changed. For example, a word linedisposed in the memory region 110 may be formed to cross the pluralityof MATs. The word line may be divided physically or logically by each ofthe plurality of MATs. The semiconductor device 100 may enable ordisable a word line corresponding to each of the plurality of MATs bythe control of the controller 200 to change the length of the activatedword line. Herein, changing the length of the activated word line maymean changing a size of an activated page.

When the size of the activated page changes, an amount of simultaneouslyinputted/outputted data may also change. For example, when the size ofthe activated page increases, the amount of the simultaneouslyinputted/outputted data may also increase. In contrast, when the size ofthe activated page decreases, the amount of the simultaneouslyinputted/outputted data may also decrease.

The row/column decoder 120 may receive a row address signal RA<0:m> anda column address signal CA<0:m> from the address buffer 160. Therow/column decoder 120 may decode the row address signal RA<0:m> andoutput a row selection signal. A word line corresponding to the rowselection signal among the word lines may be activated. Further, therow/column decoder 120 may decode the column address signal CA<0:m> andoutput a column selection signal. A bit line corresponding to the columnselection signal among the bit lines may be activated.

For example, the row/column decoder 120 may include a plurality of rowdecoders and a plurality of column decoders alternately and repeatedlyarranged in a first direction. The first direction may be substantiallyparallel to an extending direction of the bit line, an arrangingdirection of the plurality of banks BANK1 to BANKn, or an arrangingdirection of the plurality of MATs MAT1 to MATi. The row/column decoder120 may be illustrated in detail later with reference to drawings.

The data input/output circuit 130 may be connected between the databuffer 170 and the memory region 110. The data buffer 170 and the datainput/output circuit 130 may be connected with each other through aninternal data bus 180. When a write operation is performed on the memoryregion 110, the data input/output circuit 130 may store the data DATA,which is transmitted from the data buffer 170 through the internal databus 180, in a specific memory cell of the memory region 110. When a readoperation is performed on the memory region 110, the data input/outputcircuit 130 may output the data DATA, which is read from the specificmemory cell of the memory region 110, to the data buffer 170 through theinternal data bus 180.

The data input/output circuit 130 may include an input/output senseamplifier IOSA (See FIG. 3) and a write driver WTD (See FIG. 3). Theinput/output sense amplifier IOSA may transmit the data DATA read fromthe memory cells of the memory region 110 to the internal data bus 180.The write driver WTD may transmit the data DATA transmitted through theinternal data bus 180 to the memory cells of the memory region 110.However, the data input/output circuit 130 may not be limited to theabove-mentioned configuration.

The clock buffer 140 may receive system clock signals CLK and CLKB fromthe controller 200. The clock buffer 140 may buffer the system clocksignals CLK and CLKB and generate an internal clock signal ICLK based onthe buffered system clock signals CLK and CLKB. Although not shown inFIG. 2, the clock buffer 140 may include a delay circuit for controllinga phase and a timing of a clock, a delay fix loop circuit, etc. Sincethe clock buffer 140 may be well known to a skilled person in the art,any further illustrations with respect to the clock buffer 140 may beomitted herein for brevity.

The command buffer 150 may generate various internal command signalsbased on the commands CMDs received from the controller 200. Forexample, the controller 200 may change levels of a row address strobesignal/RAS, a column address strobe signal/CAS, a write enablesignal/WE, and a chip enable signal/CE, and provide the changed levelsof the row address strobe signal/RAS, the column address strobesignal/CAS, the write enable signal/WE, and the chip enable signal/CE tothe command buffer 150 of the semiconductor device 100 such that thesemiconductor device 100 performs a specific operation.

The command buffer 150 may generate an active signal ACT, a write signalWT, a read signal RD, a refresh signal REF, etc., based on the commandsCMDs such as the row address strobe signal/RAS, the column addressstrobe signal/CAS, the write enable signal/WE, and the chip enablesignal/CE received from the controller 200.

The active signal ACT may be a signal instructing an active operationfor activating a word line in the memory region 110 selected based on anaddress signal A<0:m>. The write signal WT may be a signal instructing awrite operation on the memory cells connected to the activated wordline. The read signal RD may be a signal instructing a read operation onthe memory cells connected to the activated word line. The refreshsignal REF may be a signal instructing an auto refresh operation and/ora self-refresh operation of the semiconductor device 100.

The address buffer 160 may receive the address signal A<0:m> (where m isinteger greater than or equal to 1) from the controller 200. The addresssignal A<0:m> may be information to access a specific memory cell. Theaddress signal A<0:m> may include information of a word line and a bitline to be activated. The address buffer 160 may output a row addresssignal RA<0:m> and a column address signal CA<0:m> to the row/columndecoder 120 based on the address signal A<0:m> received from thecontroller 200.

The data buffer 170 may receive data DQ<0:n> (where n is an integergreater than or equal to 1) transmitted from the controller 200 oroutput data read from the memory region 110 of the semiconductor device100 to the controller 200.

Although not depicted in FIG. 2, the data buffer 170 may include areceiver and a transmitter. The receiver may receive the data DQ<0:n>transmitted from the controller 200 through an external data bus. Thetransmitter may output the data read from the memory region 110 to theexternal data bus.

Further, although not shown in FIG. 2, the data buffer 170 may receiveand output a data strobe signal. The data strobe signal may be a signalsynchronized with the data DQ<0:n>. The data strobe signal may be asignal used by the semiconductor device 100 to receive the datatransmitted from the controller 200 or a signal used by the controller200 to receive the data transmitted from the semiconductor device 100.

FIG. 3 is a view illustrating the memory region 110 in FIG. 2.

Referring to FIG. 3, the memory region 110 may include a plurality ofmemory bank groups BG1 to BGm and a plurality of row/column decoders120. For example, the memory bank groups BG1 to BGm and the row/columndecoders 120 may be disposed on the substantially the same plane.However, the present invention is not limited thereto. For example, thememory bank groups BG1 to BGm and the row/column decoders 120 may bedisposed on different planes.

Each of the memory bank groups BG1 to BGm may include a plurality ofmemory banks BANK1 to BANKn and a plurality of local sense amplifierarrays LSAA. Each of the plurality of local sense amplifier arrays LSAAmay be disposed under corresponding memory banks BANK1 to BANKn. Forexample, numbers of the local sense amplifier arrays LSAA may besubstantially the same as numbers of the memory banks BANK1 to BANKn.However, the present invention is not limited thereto. For example, thenumbers of the local sense amplifier arrays LSAA may be different fromthose of the memory banks BANK1 to BANKn. Each of the local senseamplifier arrays LSAA may sense and amplify data read from the memorycells of the corresponding memory banks BANK1 to BANKn and loaded on alocal input/output line LIO. The local sense amplifier arrays LSAA maytransmit the amplified data to a global input/output line GIO.

In order to transmit the data read from the memory cells of each of thememory banks BANK1 to BANKn and loaded onto the corresponding localsense amplifier arrays LSAA, each of the local input/output lines LIOmay cross the corresponding memory banks BANK1 to BANKn and be connectedto the local sense amplifier arrays LSAA. The global input/output lineGIO may be electrically connected with the local sense amplifier arraysLSAA. Further, the global input/output line GIO may cross the memorybank group BG. The global input/output line may transmit the datatransmitted from the local sense amplifier arrays LSAA to acorresponding input/output sense amplifier IOSA.

FIG. 3 shows the local input/output lines LIO and the globalinput/output line GIO with respect to the first memory bank group BG1.Local input/output lines LIO and a global input/output line GIO that aresubstantially the same as the local input/output lines LIO and theglobal input/output line GIO on the first memory bank group BG1 may bedisposed on the second to m{circumflex over ( )}th memory bank groupsBG2 to BGm.

In FIG. 3, the input/output sense amplifier IOSA and the write driverWTD are included in the data input/output circuit 130. However, thepresent disclosure is not limited thereto. For example, the input/outputsense amplifier IOSA and the write driver WTD may be disposed betweenthe memory region 110 and the data input/output circuit 130.

The input/output sense amplifier IOSA and the write driver WTD may beprovided to each of the memory bank groups BG1 to BGm, as shown in FIG.3. However, the present disclosure is not limited thereto. For example,the input/output sense amplifier IOSA and the write driver WTD providedfor each of the memory bank groups BG1 to BGm may be connected to theglobal input/output line GIO extending across each of the memory bankgroups BG1 to BGm. The memory banks BANK1 to BANKn in each of the memorybank groups BG1 to BGm may commonly use a pair of the input/output senseamplifier IOSA and the write drive WTD.

The input/output sense amplifier IOSA may sense and amplify the dataDATA in the global input/output line GIO while performing the readoperation on the memory region 110. The input/output sense amplifierIOSA may transmit the amplified data to the internal data bus 180. Thewrite driver WTD may transmit the data DATA in the internal data bus 180to the global input/output line GIO while performing the write operationon the memory region 110.

For example, the data read from the memory cells of each of the memorybanks BANK1 to BANKn may be amplified to be equal to or greater than aspecific level by a corresponding local sense amplifier array LSAA. Theamplified data may be transmitted to the input/output sense amplifierIOSA through the global input/output line GIO. The input/output senseamplifier IOSA may sense and amplify the amplified data transmittedthrough the global input/output line GIO and transmit the amplified datato the internal data bus 180 (See FIG. 2).

Referring again to FIG. 3, each of the row/column decoders 120 may bedisposed between a pair of the memory bank groups, for example, thefirst memory bank group BG1 and the second memory bank group BG2. Therow/column decoders 120 may be disposed to extend in a directionsubstantially parallel to an arranging direction of the memory banksBANK1 to BANKn. In FIG. 2, the row/column decoder 120 may be separatedfrom the memory region 110 for convenience of explanation. Further, inFIG. 3, the row/column decoder 120 may be disposed in the memory region110. However, the location of the row/column decoder 120 may not belimited to a specific location and may be placed elsewhere depending ondesign.

FIG. 4 is a view illustrating a portion “A” in FIG. 3. FIG. 4 shows anexample of the first memory bank BANK1 of FIG. 3. The memory banks otherthan the first memory bank BANK1 in FIG. 3 may have a configurationsubstantially the same as that of the first memory bank BANK1 describedin FIG. 4.

Referring to FIG. 4, the first memory bank BANK1 may include a pluralityof MATs MAT1 to MATi, a plurality of sense amplifier arrays SAA1 toSAAi−1, and a plurality of edge sense amplifier arrays ESAA1 and ESAA2.

Although not shown in FIG. 4, each of the MATs MAT1 to MATi may includea plurality of word lines extending in an X-direction, and a pluralityof bit lines extending in a Y-direction. The MATs MAT1 to MATi mayinclude a plurality of memory cells connected to an intersection betweenthe plurality of word lines and the plurality of bit lines. Theplurality of memory cells may store data. Word line drivers WD may bedisposed at both sides of the plurality of MATs MAT1 to MATi.

The word line driver WD may be configured to drive a word line selectedby a row selection signal among the word lines in each of the pluralityof MATs MAT1 to MATi. In FIG. 4, the two word line drivers may bearranged at the both sides of each of the MATs MAT1 to MATi along theX-direction. However, the position and the number of the word linedriver WD may not be limited to a specific location and a specificnumber. A technology for driving the word line may have no directrelation to a main feature of the present invention. Since thetechnology for driving the word line is well known to those skilled inthe art, any further illustrations with respect to the word line driverWD may be omitted herein for brevity.

In FIG. 4, one memory bank may include one MAT array in which the MATsMAT1 to MATi may be stacked in the Y-direction. However, the presentinvention is not limited thereto. For example, one memory bank mayinclude a plurality of MAT arrays.

The sense amplifier arrays SAA1 to SAAi−1 may be arranged between theadjacent MATs MAT1 to MATi. For example, the sense amplifier arrays SAA1to SAAi−1 may be arranged between the first MAT1 and the second MAT2 tobetween the (i−1){circumflex over ( )}th MAT and (i){circumflex over( )}th MAT.

Therefore, numbers of the sense amplifier arrays SAA1 to SAAi−1 in thefirst memory bank BANK1 may be fewer than numbers of the MATs MAT1 toMATi. That is, as shown in FIG. 4, when the number of the MATs MAT1 toMATi in the first memory bank BANK1 may be (i), the number of the senseamplifier arrays SAA1 to SAAi−1 may be (i−1). Here, ‘i’ may be aninteger greater than or equal to 2.

Each of the sense amplifier arrays SAA1 to SAAi−1 may be connected withthe bit lines in the adjacent MATs MAT1 to MATi. For example, the firstsense amplifier arrays SAA1 between the first MAT MAT1 and the secondMAT MAT2 may be connected with a part of the bit lines in the first MATMAT1 and a part of the bit lines in the second MAT MAT2. This structuremay be referred to as an open bit line structure. The first senseamplifier array SAA1 may sense and amplify a voltage difference betweenthe part of the bit lines in the first MAT MAT1 and the part of the bitlines in the second MAT MAT2.

Although not shown in FIG. 4, each of the sense amplifier arrays SAA1 toSAAi−1 may include a plurality of sense amplifiers SA. Each of the senseamplifiers SA may be connected to one bit line among the part of the bitlines in the first MAT MAT1, for example, a positive bit line, and onebit line among the part of the bit lines in the second MAT MAT2, forexample, a negative bit line.

The edge sense amplifier arrays ESAA1 and ESAA2 may be respectivelyarranged over the uppermost first MAT MAT1 and under the lowermost(i){circumflex over ( )}th MAT MATi among the MATs MAT1 to MATi of thefirst memory bank BANK1. The edge sense amplifier arrays ESAA1 and ESAA2may include a first edge sense amplifier array ESAA1 arranged over thefirst MAT MAT1, and a second edge sense amplifier array ESAA2 arrangedunder the (i){circumflex over ( )}th MAT MATi.

Thus, the first edge sense amplifier array ESAA1 may be arranged overthe uppermost first MAT MAT1 of the first memory bank BANK1. The firstsense amplifier array SAA1 may be arranged under the uppermost first MATMAT1 of the first memory bank BANK1. The second sense amplifier arraySAA2 may be arranged under the second MAT MAT2 of the first memory bankBANK1. The (i−1){circumflex over ( )}th sense amplifier array SAAi−1 maybe arranged over the lowermost (i)th MAT MATi of the first memory bankBANK1. The second edge sense amplifier arrays ESAA2 may be arrangedunder the lowermost (i)th MAT MATi of the first memory bank BANK1.

Because the first edge sense amplifier array ESAA1 may be arranged overthe first memory bank BANK1 and the second edge sense amplifier arrayESAA2 may be arranged under the first memory bank BANK1, it may not berequired to form a dummy MAT at an edge portion of the first memory bankBANK1 along the Y-direction.

The first edge sense amplifier array ESAA1 may be connected to a part ofthe bit lines in the first MAT MAT1. The second edge sense amplifierarray ESAA2 may be connected to a part of the bit lines in the(i){circumflex over ( )}th MAT MATi. For example, the bit lines in thefirst MAT MAT1 may include first bit lines connected to the first senseamplifier array SAA1 and second bit lines connected to the first edgesense amplifier array ESAA1. The bit lines in the (i){circumflex over( )}th MAT MATi may include first bit lines connected to the (i−1)Λthsense amplifier array SAAi−1 and second bit lines connected to thesecond edge sense amplifier array ESAA2.

Each of the first edge sense amplifier array ESAA1 and the second edgesense amplifier array ESAA2 may include a plurality of edge senseamplifiers ESA (not shown). The edge sense amplifier ESA in the firstand second edge sense amplifier arrays ESAA1 and ESAA2 may have astructure different from that of the sense amplifier SA in the first to(i){circumflex over ( )}th sense amplifier arrays SAA1 to SAAi−1. Thestructural differences and operational differences between the senseamplifier SA and the edge sense amplifier may be illustrated later withreference to following figures.

Referring again to FIG. 4, the row/column decoder 120 may include aplurality of row decoders Row-Dec and a plurality of column decodersCol-Dec arranged in a direction substantially parallel to an arrangingdirection of the MATs MAT1 to MATi of the first memory bank BANK1. Therow decoders Row-Dec and the column decoders Col-Dec may be arrangedalternately and repeatedly.

For example, each of the row decoders Row-Dec may be aligned with thecorresponding MATs MAT1 to MATi in the X-direction. Each of the columndecoders Col-Dec may be aligned with the corresponding sense amplifierarrays SAA1 to SAAi−1 and the first and second edge sense amplifierarrays ESAA1 and ESAA2 in the X-direction. The row decoders Row-Dec andthe column decoders Col-Dec may be alternately arranged in theY-direction.

Row selection signal lines for transmitting row selection signalsoutputted from each of the row decoders Row-Dec may extend in theX-direction. Column selection signals for transmitting column selectionsignals outputted from each of the column decoders Col-Dec may extend inthe X-direction. Thus, the row selection signals and the columnselection signals may be substantially parallel to each other. Thecolumn selection signal lines may cross the sense amplifier arrays SAA1to SAAi−1, and the first and second edge sense amplifier arrays ESAA1and ESAA2 in the X-direction.

FIG. 5 is a plan layout view illustrating a column selection signal lineand data input/output lines SIO, LIO, and GIO in accordance with anembodiment of the present disclosure. Specifically, FIG. 5 showsarrangement relations between a column selection signal line and datainput/output lines SIO, LIO and GIO. In FIG. 5, a first metal layer M1may represent a lowermost line, a second metal layer M2 may representlines on the first metal layer M1, and a third metal layer M3 mayrepresent an uppermost line. For convenience of explanations, FIG. 5shows the second MAT MAT2, the third MAT MAT3, the first to third senseamplifier arrays SAA1 to SAA3 and one local sense amplifier array LSAA.

Referring to FIG. 5, a first row address signal RA1<0:m> and a firstcolumn address signal CA1<0:m> outputted from the address buffer 160(See FIG. 2) may be inputted into the corresponding row decoder Row-Decand the corresponding column decoder Col-Dec.

The row decoder Row-Dec may decode the inputted first row address signalRA1<0:m> to output a row selection signal for activating the first wordline WL1 among the word lines of the first MAT MAT1. The word linedriver WD may drive the first word line WL1 selected by the rowselection signal outputted from the row decoder Row-Dec.

The column decoder Col-Dec may decode the inputted first column addresssignal CA1<0:m> to output first column selection signals C1_T and C1_Bfor activating a first bit line BLT1 among the bit lines in the thirdMAT MAT3 and a first complementary bit line BLB1 among the bit lines inthe second MAT MAT2.

The first column selection signals C1_T and the C1_B may be inputtedinto a sense amplifier SA1 of the second sense amplifier array SAA2between the second MAT MAT2 and the third MAT MAT3 through columnselection signal lines CSL crossing the second sense amplifier arraySAA2. The sense amplifier SA1 may amplify a voltage of the first bitline BLT1 and a voltage of the first complementary bit line BLB1 to alevel greater than or equal to a first level. The sense amplifier SA1may transmit the amplified voltages of the first bit line BLT1 and thefirst complementary bit line BLB1 to corresponding segment input/outputlines SIO through channels formed by inputting the first columnselection signals C1_T and C1_B.

As shown in FIG. 5, the column selection signal lines CSL fortransmitting the column selection signals and the segment input/outputlines SIO for receiving the voltages amplified to a level greater thanor equal to the first level by the sense amplifier SA1 may correspond tothe first metal layer M1. In example embodiments, the column selectionsignal lines CSL and the segment input/output lines SIO may bepositioned on a same plane. The column selection signal lines CSL andthe segment input/output lines SIO may be extended parallel to eachother. For example, the column selection signal lines CSL and thesegment input/output lines SIO may be extended in a directionsubstantially parallel to the first word line WL1.

The segment input/output lines SIO may transmit the voltages of thefirst bit line BLT1 and the first complementary bit line BLB1 amplifiedto a level greater than or equal to the first level by the senseamplifier SA1 to corresponding local input/output lines LIO. The segmentinput/output lines SIO and the local input/output lines LIO may beelectrically connected with each other via a contact C.

The local input/output lines LIO may be extended in a directionsubstantially perpendicular to the column selection signal lines CSL andthe segment input/output lines SIO. That is, the local input/outputlines LIO may be extended in a direction substantially parallel to thebit lines BLT1 and BLB1. The local input/output lines LIO may correspondto the second metal layer M2 arranged on a plane higher than a plane onwhich the column selection signal lines CSL and the segment input/outputlines SIO may be positioned. The local input/output lines LIO maytransmit the voltages of the first bit line BLT1 and the firstcomplementary bit line BLB1 amplified to a level greater than or equalto the first level to the local sense amplifier array LSAA.

The voltages of the first bit line BLT1 and the first complementary bitline BLB1 transmitted through the local input/output lines LIO may beinputted into the corresponding local sense amplifier LSA among thelocal sense amplifiers LSA in the local sense amplifier array LSAA. Thelocal sense amplifier LSA may amplify the voltages of the first bit lineBLT1 and the first complementary bit line BLB1, which have a levelgreater than or equal to the first level, to a level greater than orequal to a second level. The local sense amplifier LSA may transmit theamplified voltages of the first bit line BLT1 and the firstcomplementary bit line BLB1 that have a level greater than or equal tothe second level to the global input/output line GIO. The globalinput/output line GIO may correspond to the third metal layer M3arranged over the local input/output lines LIO.

The global input/output line GIO may transmit the amplified voltages ofthe first bit line BLT1 and the first complementary bit line BLB1 thathave a level greater than or equal to the second level to theinput/output sense amplifier IOSA (See FIG. 3). In FIG. 5, the two localinput/output lines LIO may be connected to an input terminal of thelocal sense amplifier LSA and one global input/output line GIO may beconnected to an output terminal of the local sense amplifier LSA.However, the present invention is not limited thereto. For example, theglobal input/output lines GIO, the number of which is substantially thesame as the numbers of the local input/output lines LIO, may berespectively connected with the output terminals of the local senseamplifiers LSA.

The input/output sense amplifier IOSA may sense a voltage differencebetween the first bit line BLT1 and the first complementary bit lineBLB1 that have a level greater than or equal to the second level. Theinput/output sense amplifier IOSA may amplify the voltage difference toa level greater than or equal to a third level. The input/output senseamplifier IOSA may transmit the amplified voltage difference between thefirst bit line BLT1 and the first complementary bit line BLB1 that havea level greater than or equal to the third level to the internal databus 180 (See FIG. 2). The voltage transmitted from the input/outputsense amplifier IOSA may correspond to data read from a first memorycell MC1 of the third MAT MAT3.

Referring again to FIG. 5, a second row address signal RA2<0:m> and asecond column address signal CA2<0:m> outputted from the address buffer160 (See FIG. 2) may be inputted into the corresponding row decoderRow-Dec and the corresponding column decoder Col-Dec, respectively.

The row decoder Row-Dec may decode the inputted second row addresssignal RA2<0:m> to output a row selection signal for activating thesecond word line WL2 among the word lines of the second MAT MAT2. Theword line driver WD may drive the second word line WL2 selected by therow selection signal outputted from the row decoder Row-Dec.

The column decoder Col-Dec may decode the inputted second column addresssignal CA2<0:m> to output second column selection signals C2_T and C2_Bfor activating a second bit line BLT2 among the bit lines in the secondMAT MAT2.

The second column selection signals C2_T and the C2_B may be inputtedinto a sense amplifier SA2 of the first sense amplifier array SAA1through the column selection signal lines CSL crossing the first senseamplifier array SAA1. The sense amplifier SA2 may amplify a voltage ofthe second bit line BLT2 and a voltage of a second complementary bitline BLB2 to a level greater than or equal to a first level. The senseamplifier SA2 may transmit the amplified voltages of the second bit lineBLT2 and the second complementary bit line BLB2 to the correspondingsegment input/output lines SIO through channels formed by inputting thesecond column selection signals C2_T and C2_B.

The segment input/output lines SIO may transmit the voltages of thesecond bit line BLT2 and the second complementary bit line BLB2amplified to a level greater than or equal to the first level to thecorresponding local input/output lines LIO. The local input/output linesLIO may transmit the voltages of the second bit line BLT2 and the secondcomplementary bit line BLB2 amplified to a level greater than or equalto the first level to the local sense amplifier LSA.

The local sense amplifier LSA may amplify the voltages of the second bitline BLT2 and the second complementary bit line BLB2, which have a levelgreater than or equal to the first level, to a level greater than orequal to a second level. The local sense amplifier LSA may transmit theamplified voltages of the second bit line BLT2 and the secondcomplementary bit line BLB2 that have a level greater than or equal tothe second level to the global input/output line GIO. The globalinput/output line GIO may transmit a difference between the amplifiedvoltages of the second bit line BLT2 and the second complementary bitline BLB2 that have a level greater than or equal to the second level tothe input/output sense amplifier IOSA.

The input/output sense amplifier IOSA may sense a voltage differencebetween the second bit line BLT2 and the second complementary bit lineBLB2 that have a level greater than or equal to the second level. Theinput/output sense amplifier IOSA may amplify the voltage difference toa level greater than or equal to a third level. The input/output senseamplifier IOSA may transmit the amplified voltage difference between thesecond bit line BLT2 and the second complementary bit line BLB2 thathave a level greater than or equal to the third level to the internaldata bus 180. The voltage transmitted from the input/output senseamplifier IOSA may correspond to data read from a second memory cell MC2of the second MAT MAT2.

FIG. 6 is a view illustrating connection relations between the senseamplifier SA, the bit lines BLT and BLB, the column selection signalline CSL and the data input/output lines SIO and LIO.

Referring to FIG. 6, the sense amplifier SA may be connected to a bitline BLT and a complementary bit line BLB. The bit line BLT and thecomplementary bit line BLB may be connected to segment input/outputlines SIOT and SIOB through a switching element such as a transistor.The column selection signal lines CSL may be connected to an inputterminal of the switching element, i.e., a gate of the transistor. Thus,when a logic signal ‘high’ may be inputted through the column selectionsignal lines CSL, the switching element may be turned-on to formchannels between the bit line BLT and the segment input/output line SIOTand between the complementary bit line BLB and the segment input/outputline SIOB.

The column selection signal lines CSL, which may be connected to thesegment input/output lines SIOT and SIOB and the gate of the transistor,may correspond to the lowermost first metal layer M1. The segmentinput/output lines SIOT and the SIOB and the column selection signallines CSL may be extended parallel to each other.

Local input/output lines LIOT and LIOB connected to the segmentinput/output lines SIOT and SIOB through a contact C may correspond tothe second metal layer M2 on the first metal layer M1. The localinput/output lines LIOT and LIOB may be extended in a directionsubstantially perpendicular to the segment input/output lines SIOT andSIOB and the column selection signal lines CSL. The local input/outputlines LIOT and LIOB may be connected to an input terminal of the localsense amplifier LSA. An output terminal of the local sense amplifier LSAmay be connected to the global input/output line GIO. The globalinput/output line GIO may correspond to the third metal line M3 on thesecond metal layer M2.

Because the column selection signal lines CSL may be substantiallycoplanar with the segment input/output lines SIO, and the columnselection signal lines CSL and the segment input/output lines SIO may beextended along the same direction, numbers of the local input/outputlines LIO that can be disposed on the MAT may be increased to equal tonumbers of the column selection signal lines CLS or a number greaterthan the number of the column selection signal lines CLS. Therefore, anamount of the data simultaneously inputted/outputted into/from one MATmay also be increased.

Further, because an amount of the data greater than or equal to the datathat is inputted/outputted by driving conventional MATs may beinputted/outputted by driving one MAT, the semiconductor device may havelower power consumption and improved operational speed.

FIG. 7A is a view illustrating the segment input/output line SIO, thelocal input/output line LIO, and the column selection signal line CSL.Although not shown in FIG. 7A, the segment input/output line SIO mayinclude the segment input/output line SIOT connected to the bit line BLT(See FIG. 6) and the segment input/output line SIOB connected to thecomplementary bit line BLB (See FIG. 6). Further, the at least one senseamplifier SA (See FIG. 6) may be connected to one segment input/outputline SIO through a switching element.

Referring to FIG. 7A, the segment input/output line SIO may cross thesense amplifier array SAA. The segment input/output line SIO may bedivided into a plurality of lines. Numbers of the divided lines of thesegment input/output line SIO may be changed in accordance with the typeof the semiconductor device.

For example, the numbers of the divided lines of the segmentinput/output lines SIO may be changed in accordance with the amount ofthe data simultaneously inputted/outputted into/from one MAT. That is,the divided numbers of the segment input/output line SIO may beincreased in proportion to increasing of the data amount simultaneouslyinputted/outputted into/from one MAT. In contrast, the divided numbersof the segment input/output line SIO may be decreased in proportion todecreasing of the data amount simultaneously inputted/outputtedinto/from one MAT.

The column selection signal line CSL may cross the sense amplifier arraySAA similar to how the segment input/output line SIO crosses the senseamplifier array SAA. In other words, the column selection signal lineCSL may be substantially parallel to the segment input/output line SIO.

The local input/output line LIO may be extended in a directionsubstantially perpendicular to the column selection signal line CSL andthe segment input/output line SIO. The local input/output line LIO maybe connected with the segment input/output line SIO through a contact(for example, contact C in FIG. 5 and FIG. 6). The local input/outputline LIO may receive the data from the segment input/output line SIOthrough the contact.

As mentioned above, when the segment input/output line SIO is dividedinto the lines, numbers of the local input/output lines LIO may besubstantially the same as the numbers of the divided lines of thesegment input/output line SIO. That is, the local input/output lines LIOmay respectively correspond to the divided lines of the segmentinput/output line SIO.

Referring again to FIG. 7A, the column selection signal line CSL and thesegment input/output line SIO may correspond to a metal layer M1 formedon a substantially same plane. The local input/output line LIO maycorrespond to a metal layer M2 positioned on a plane higher than theplane on which the column selection signal line CSL and the segmentinput/output line SIO may be located. The column selection signal lineCSL and the segment input/output line SIO may be extended on the senseamplifier array SAA in a first direction, for example, an extendingdirection of the word line. The local input/output line LIO may beextended on the sense amplifier array SAA and the MAT in a seconddirection, for example, an extending direction of the bit line.

FIG. 7B is a view illustrating the segment input/output line SIO, thelocal input/output line LIO and the column selection signal line CSL.For convenience of explanations, any further illustrations with respectto elements substantially the same as those in FIG. 7A may be omittedherein for brevity.

Referring to FIG. 7B, the segment input/output line SIO may be extendedon the sense amplifier array SAA in the first direction, for example,the extending direction of the word line. The segment input/output lineSIO may be divided into a plurality of lines.

The local input/output line LIO may be extended on the sense amplifierarray SAA and the MAT in the second direction, for example, theextending direction of the bit line. The local input/output line LIO maybe connected with the segment input/output line SIO through the contact.

The column selection signal line CSL may include a first columnselection signal line CSL_p extended on the sense amplifier array SAA inthe first direction, and a second column selection signal line CSL_vextended on the MAT in the second direction.

The first column selection signal line CSL_p may correspond to the metallayer M1 substantially coplanar with the segment input/output line SIO.The second column selection signal line CSL_v may correspond to themetal layer M2 substantially coplanar with the local input/output lineLIO. Thus, the first column selection signal line CSL_p may be arrangedon a level lower than that on which the second column selection signalline CSL_v may be positioned.

FIG. 7C is a view illustrating the segment input/output line SIO, thelocal input/output line LIO, and the column selection signal line CSL.For convenience of explanation and brevity, any further illustrationswith respect to elements substantially the same or overlapping as thosein FIGS. 7A and 7B are omitted herein.

Referring to FIG. 7C, the segment input/output line SIO may be extendedon the sense amplifier array SAA in the first direction. The segmentinput/output line SIO may be divided into a plurality of lines.

The column selection signal line CSL and the local input/output line LIOmay be extended on the sense amplifier array SAA and the MAT in thesecond direction. Thus, the column selection signal line CSL and thelocal input/output line LIO may be substantially perpendicular to thesegment input/output line SIO. The column selection signal line CSL andthe local input/output line LIO may correspond to the metal layer M2 ona substantially same plane. The segment input/output line SIO maycorrespond to the metal layer M1 arranged on a level lower than that onwhich the column selection signal line CSL and the local input/outputline LIO may be positioned.

The column selection signal line CSL may transmit first column selectionsignals CYi_1 among the column selection signals to the sense amplifierarray SAA in response to a first enable signal E1. The column selectionsignal line CSL may transmit second column selection signals CYi_2 amongthe column selection signals to the sense amplifier array SAA inresponse to a second enable signal E2.

The segment input/output line SIO may sequentially transmit data, forexample, first data read by inputting the first column selection signalsCYi_1, and data, for example, second data read by inputting the secondcolumn selection signals CYi_2 to the local input/output line LIO. Thatis, the first data and the second data may be sequentially transmittedto one local input/output line LIO. The first data and the second datatransmitted to the local input/output line LIO may be sequentiallystored in a first data register D1 and a second data register D2 of anadditional data register DR (See FIG. 8). The first and second data maybe simultaneously outputted from the data register DR.

FIG. 8 is a view illustrating the data register DR.

Referring to FIG. 8, the data register DR may be connected with thelocal input/output line LIO. The data register DR may include registerscorresponding to each of the local input/output lines LIO. The firstdata D1 and the second data D2 may be stored in the registerscorresponding to the local input/output lines LIO.

As mentioned above, the first data D1 may correspond to data read byinputting the first column selection signals CYi_1. The second data D2may correspond to data read by inputting the second column selectionsignal CYi_2. The first data D1 and the second data D2 may besequentially transmitted through one local input/output line LIO. Thetransmitted first and second data D1 and D2 may be stored in the dataregister DR. The first data D1 and the second data D2 in the dataregister DR may be simultaneously outputted as one data D.

The data D outputted from the data register DR may be inputted into thelocal sense amplifier array LSAA (See FIG. 5). However, the data D maybe inputted into other elements.

FIG. 9 is a circuit diagram illustrating the normal sense amplifier SA.

Referring to FIG. 9, the normal sense amplifier SA may include adetection amplifier 10, a pull-up controller 20, and a pull-downcontroller 30. The detection amplifier 10 may detect and amplify avoltage difference between the positive bit line BLT and the negativebit line BLB. The pull-up controller 20 may provide the detectionamplifier 10 with a pull-up voltage. The pull-down controller 30 mayprovide the detection amplifier 10 with a pull-down voltage.

The detection amplifier 10 may include two PMOS transistors P1 and P2,and two NMOS transistors N1 and N2. For example, when the voltage levelof the positive bit line BLT may be higher than the voltage level of thenegative bit line BLB, the PMOS transistor P1 and the NMOS transistor N2may be turned-on and the PMOS transistor P2 and the NMOS transistor N1may be turned-off. The voltage level of the positive bit line BLT may beamplified to a level of a power voltage VDD by a pull-up power supplyterminal RTO. The voltage level of the negative bit line BLB may beamplified to a level of a ground voltage VSS by a pull-down power supplyterminal SB.

The pull-up controller 20 may provide the pull-up power supply terminalRTO of the detection amplifier 10 with the power voltage VDD in responseto a pull-up amplification activation signal SAP. The pull-downcontroller 30 may provide the pull-down power supply terminal SB of thedetection amplifier 10 with the ground voltage VSS in response to apull-down amplification activation signal SAN. The pull-up amplificationactivation signal SAP and the pull-down amplification activation signalSAN may be inactivated when a pre-charge operation. In contrast, thepull-up amplification activation signal SAP and the pull-downamplification activation signal SAN may be activated when an activeoperation.

The positive bit line BLT and the negative bit line BLB connected to thedetection amplifier 10 may be pre-charged with a substantially samevoltage at a normal state. When an arbitrary word line is enabled, acell transistor connected to the word line may be turned-on. Data in acapacitor may be transmitted to the positive bit line BLT through achannel of the turned-on transistor. This operation may be referred toas a charge sharing. The voltage level of the negative bit line BLB maybe maintained. In contrast, the voltage level of the positive bit lineBLT may be changed by the charge sharing.

The pull-up amplification activation signal SAP and the pull-downamplification activation signal SAN may be activated to a high levelwhen the active operation. The power voltage VDD and the ground voltageVSS may be supplied to the pull-up power supply terminal RTO and thepull-down power supply terminal SB of the detection amplifier 10,respectively, by the pull-up amplification activation signal SAP and thepull-down amplification activation signal SAN. The level of the powersupply VDD and the level of the ground voltage VSS may be provided tothe pull-up power supply terminal RTO and the pull-down power supplyterminal SB, respectively, so that the voltage difference between thepositive bit line BLT and the negative bit line BLB may be amplified.

FIG. 10A is a circuit diagram illustrating the edge sense amplifier ESA,and FIG. 10B is a timing chart illustrating operations of the edge senseamplifier ESA. For convenience of explanations, any furtherillustrations with respect to elements substantially the same as thosein FIG. 9 may be omitted herein for brevity.

Referring to FIG. 10A, the edge sense amplifier ESA may include adetection amplifier 50, a pull-up controller 60, and a pull-downcontroller 70. The detection amplifier 50 may detect and amplify avoltage difference between the positive bit line BLT and the negativebit line BLB. The pull-up controller 60 may provide the detectionamplifier 50 with a pull-up voltage. The pull-down controller 70 mayprovide the detection amplifier 50 with a pull-down voltage.

The pull-up controller 60 may provide a pull-up power supply terminalRTO of the detection amplifier 50 with a power voltage VDD in responseto a pull-up amplification activation signal SAP.

The pull-down controller 70 may provide pull-down power supply terminalsSB1 and SB2 of the detection amplifier 50 with a ground voltage VSS inresponse to pull-down amplification activation signals SAN1 and SAN2.The pull-down controller 70 may include a first pull-down controller 71and a second pull-down controller 73. The first pull-down controller 71may provide the first pull down power supply terminal SB1 of thedetection amplifier 50 with a first ground voltage VSS1 in response tothe first pull-down amplification activation signal SAN1. The secondpull-down controller 73 may provide the second pull down power supplyterminal SB2 of the detection amplifier 50 with a second ground voltageVSS2 in response to the second pull-down amplification activation signalSAN2.

The pull-up amplification activation signal SAP, the first pull-downamplification activation signal SAN1, and the second pull-downamplification activation signal SAN2 may be activated to a high levelwhen the active operation. The power voltage VDD, the first groundvoltage VSS1, and the second ground voltage VSS2 may be supplied to thepull-up power supply terminal RTO, the first pull-down power supplyterminal SB1 and the second pull-down power supply terminal SB2 of thedetection amplifier 50, respectively, by the activated pull-upamplification activation signal SAP, the activated first pull-downamplification activation signal SAN1 and the activated second pull-downamplification activation signal SAN2.

Because an edge MAT may not exist as shown in FIG. 4, the edge senseamplifier ESA may not sense by two-arm bit line structure. The edgesense amplifier ESA may sense by one arm bit line structure. Therefore,a deterioration of a sensing margin may be generated by sensing noises.

Further, as shown in FIG. 10B, slopes of the positive bit line BLT andthe negative bit line BLB in an offset cancellation section may bedifferent from each other. That is, the slope of the negative bit lineBLB may be higher than the slope of the positive bit line BLT. Thus, atime for saturating offset cancellation information of the positive bitline BLT may be delayed to generate the deterioration of the sensingspeed.

In example embodiments, the first ground voltage VSS1 and the secondground voltage VSS2 may be provided to the first pull-down power supplyterminal SB1 and the second pull-down power supply terminal SB2 of thedetection amplifier 50 from the active operation to a first time torapidly saturate the offset cancellation information of the positive bitline BLT as shown in FIG. 10B. In FIG. 10B, a dotted line may representthe slope of the positive bit line BLT in the offset cancellationsection when the edge sense amplifier ESA may include one pull-downcontroller. A solid line may represent the slope of the positive bitline BLT in the offset cancellation section when the edge senseamplifier ESA may include two pull-down controllers. A section t1 to t2from the active operation to the first time may correspond to a firstoffset cancellation section OC1.

Because the two ground voltages VSS1 and VSS2 may be supplied to thepull-down power supply terminals SB1 and SB2 in the first offsetcancellation section OC1, the voltage levels of the positive bit lineBLT and the negative bit line BLB may be dropped to an undesired level.

In order to solve the above-mentioned drop, the second pull-downamplification activation signal SAN2 may be inactivated to a low levelafter the first time t2 may be elapsed. The pull-up amplificationactivation signal SAP and the first pull-down amplification activationsignal SAN1 may be maintained as the high level. Thus, the power voltageVDD and the first ground voltage VSS1 may be supplied to the pull-uppower supply terminal RTO and the first pull-down power supply terminalSB1 of the detection amplifier 50, respectively. In contrast, the secondground voltage VSS2 may not be supplied to the second pull-down powersupply terminal SB2 of the detection amplifier 50.

Therefore, as shown in FIG. 10B, the voltage levels of the positive bitline BLT and the negative bit line BLB may be increased from the firsttime t2 to a second time t3. A section between the first time t2 and thesecond time t3 may correspond to a second offset cancellation sectionOC2. After the second time t3 may be elapsed, the pull-up amplificationactivation signal SAP and the first pull-down amplification activationsignal SAN1 may be inactivated to a low level.

FIG. 11 is a view illustrating an electronic system including thesemiconductor device of example embodiments.

Referring to FIG. 11, an electronic system 1000 of this exampleembodiment may include a data storage circuit 1001, a memory controller1002, a buffer memory 1003 and an input/output interface 1004.

The data storage circuit 1001 may store data applied from the memorycontroller 1002 by control signals of the memory controller 1002. Thedata storage circuit 1001 may read the stored data. The data storagecircuit 1001 may output the read data to the memory controller 1002. Thedata storage circuit 1001 may include a non-volatile memory forcontinuously storing the data when a power may be cut off. Thenon-volatile memory may include a NOR flash memory, a NAND flash memory,a phase changeable random access memory (PRAM), a resistive randomaccess memory (RRAM), a spin transfer torque random access memory(STTRAM), a magnetic random access memory (MRAM), etc.

The memory controller 1002 may decode commands applied from an externaldevice such as a host device through the input/output interface 1004.The memory controller 1002 may control data input/output of the datastorage circuit 1001 and the buffer memory 1003 in accordance withdecoded results. In FIG. 9, the memory controller 1002 may be shown asone block. However, the present invention is not limited thereto. Forexample, the memory controller 1002 may include a controller forcontrolling the data storage circuit 1001 and a controller forcontrolling the buffer memory 1003.

The buffer memory 1003 may temporarily store the data processed by thememory controller 1002, i.e., the data inputted/outputted into/from thedata storage circuit 1001. The buffer memory 1003 may store the dataapplied from the memory controller 1002 by the control signal. Thebuffer memory 1003 may read the stored data. The buffer memory 1003 mayoutput the read data to the memory controller 1002. The buffer memory1003 may include a non-volatile memory such as a DRAM, an SRAM, etc.

The input/output interface 1004 may provide the memory controller 1002and the external device with a physical connection so that the memorycontroller 1002 may receive the control signals for inputting/outputtingthe data from the external device and the data may be transmittedbetween the memory controller 1002 and the external device. Theinput/output interface 1004 may include any one of various interfaceprotocols such as a USB, an MMC, a PCI-E, an SAS, an SATA, a PATA, anSCSI, an ESDI, an IDE, etc.

The electronic system 1000 may be used as an auxiliary memory device ofthe host device or an external storage device. The electronic system1000 may include a solid state disk (SSD), a universal serial bus (USB)memory, a secure digital (SD) card, a mini secure digital card (mSD), amicro secure digital card (micro SD), a secure digital high capacity(SDHC), a memory stick card, a smart media card (SM), a multi media card(MMC), an embedded multi media card (eMMC), a compact flash card (CF),etc. The semiconductor device of this example embodiment may be appliedto the buffer memory 1003.

FIG. 12 is a view illustrating a system including the semiconductordevice of example embodiments.

The semiconductor device of this example embodiment may be usefully usedin a memory device, a processor and a computer system. For example, thesystem 2000 may use the semiconductor device in FIG. 1 as a memorydevice 2350.

The system 2000 may include at least one processor 2100 or a centralprocessing unit (CPU). The processor 2100 may be individually used.Alternatively, the processor 2100 may be used with other CPUs. Inexample embodiments, the system 2000 may include one processor 2100.Alternatively, the system 2000 may include a plurality of physical orlogical CPUs.

A chip set 2150 may be connected with the processor 2100. The chip set2150 may be a communication path for transmitting signals between theprocessor 2100 and other devices of the system 2000. The other device ofthe system 2000 may include a memory controller 2200, an input/output(I/O) bus 2250 and a disk drive controller 2300.

In a configuration of the system 2000, different signals may betransmitted through the chip set 2150. The memory controller 220 may beconnected with the chip set 2150. The memory controller 2200 may includethe semiconductor device in FIG. 1.

The memory controller 2200 may receive request signals from theprocessor 2100 through the chip set 2150. The memory controller 2200 maybe arranged in the chip set 2150.

The memory controller 2200 may be connected with at least one memorydevice 2350. In example embodiments, the memory device 2350 may includethe semiconductor device in FIG. 1. The memory device 2350 may includethe word lines and the bit lines for defining the memory cells.

The chip set 2150 may be connected with the I/O bus 2250. The I/O bus2250 may be a communication path for transmitting signals between thechip set 2150 and input/output devices 2410, 2420 and 2430. Theinput/output devices 2410, 2420 and 2430 may include a mouse 2410, avideo display 2420 and a keyboard 2430.

The I/O bust 2250 may use any one of communication protocols forcommunicating with the input/output devices 2410, 2420 and 2430. The I/Obus 2250 may be arranged in the chip set 2150.

The disk drive controller 2300 may be connected with the internal diskdriver 2450. The disk drive controller 2300 may be a communication pathbetween the chip set 2150 and the at least one internal disk driver2450. The internal disk driver 2450 may store commands and data toreadily perform a disconnection of the external data storage device.

The disk drive controller 2300 and the internal disk driver 2450 may becommunicated with each other. Alternatively, the disk driver controller2300 and the internal disk driver 2450 may be communicated with eachother through the chip set 2150 using a communication protocol.

In FIG. 12, the system 2000 may include the semiconductor device inFIG. 1. However, the system 2000 may include other devices.

FIG. 13 is a view illustrating a memory module including thesemiconductor device of example embodiments.

Referring to FIG. 13, a memory module 3000 may include a plurality ofmemory chips 3100 to 3 n 00 and a register chip 3010. The memory chips3100 to 3 n 00 may include the semiconductor device 100 in FIG. 1.

The memory chips 3100 to 3 n 00 may receive a command, an address, data,etc., from an external device such as a host, a memory controller, anAP, etc. The memory chips 3100 to 3 n 00 may perform a read operationand a write operation of the data. The register chip 3010 may receive acommand, a control signal, etc., from the external device. The registerchip 3010 may store mode register set (MRS) information based on thereceived command and control signals. The memory chips 3100 to 3 n 00may include the semiconductor device illustrated with reference to FIGS.2 to 10B.

FIG. 14 is a block diagram illustrating a memory system including thesemiconductor device of example embodiments.

Referring to FIG. 14, a memory system 4000 may include a memory device4100 and a memory controller 4200.

The memory controller 4200 may be connected with a host and the memorydevice 4100. The memory controller 4200 may transmit data read from thememory device 4100 to the host. The memory controller 4200 may store thedata transmitted from the host in the memory device 4100.

The memory controller 4200 may include a processing unit 4210, a hostinterface 4220, a RAM 4230 and a memory interface 4240. The processingunit 4210 may control whole operations of the memory controller 4200.The host interface 4220 may include a protocol for performing dataexchange between host and the memory controller 4200. For example, thememory controller 4200 may be communicated with the host through a USB,an MMC, a PCI-E, an advanced technology attachment (ATA), a serial-ATA,a parallel-ATA, an SCSI, an ESDI, an integrated drive electronics (IDE),an embedded multi media card (eMMC), an universal flash storage (UFS),etc. The RAM 4230 may be used as an operational memory of the processingunit 4210. The RAM 4230 may include the semiconductor device illustratedwith reference to FIGS. 2 to 10B. The RAM 4230 may be operated based onthe operations of the semiconductor device illustrated with reference toFIGS. 2 to 10B.

The memory interface 4240 may interface with the memory device 4100. Thememory controller 4200 may further include an error correction block.The error correction block may detect and correct errors of the dataread from the memory device 4100.

The memory controller 4200 and the memory device 4100 may be integratedinto one semiconductor device. The memory controller 4200 and the memorydevice 4100 may be integrated into one semiconductor device to form amemory card. For example, the memory controller 4200 and the memorydevice 4100 may be integrated into one semiconductor device to form a PCcard (PCMCIA), a compact flash card (CF), a smart media card (SM/SMC), amemory stick, a multi media card (MMC, RS-MMC, MMCmicro), an SD card(SD, miniSD, microSD), a universal flash storage (UFS), etc.

Alternatively, the memory controller 4200 and the memory device 4100 maybe integrated into one semiconductor device to form a semiconductorsolid state disk/drive (SSD). When the memory system 4000 may be used asthe semiconductor disk (SSD), the host connected with the memory system4000 may have improved operational speed.

Further, the memory system 4000 may be applied to a PDA, a portablecomputer, a web tablet, a wireless phone, a mobile phone, a digitalmusic player, devices for wireless communicating information, etc.

FIG. 15 is a block diagram illustrating a computing system including thememory system in FIG. 14.

Referring to FIG. 15, a computing system 5000 may include a centralprocessing unit (CPU) 5100, an RAM 5200, an input/output interface 5300,a power 5400 and a memory system 4000.

The memory system 4000 may be electrically connected to the CPU 5100,the RAM 5200, the input/output interface 5300 and the power 5400 througha system bus 5600. Data provided from the input/output interface 5300 orprocessed by the CPU 5100 may be stored in the memory system 4000. Thememory system 4000 may include a controller 4200 and a non-volatilememory device 4100.

For example, the RAM 5200 may be an operational memory of the computingsystem 5000. The RAM 5200 may include the semiconductor deviceillustrated with reference to FIGS. 2 to 10B. The RAM 5200 may beoperated based on the operations of the semiconductor device illustratedwith reference to FIGS. 2 to 10B. Further, the RAM 5200 may include thememory module illustrated with reference to FIG. 13.

FIG. 16 is a block diagram illustrating a user's system including thesemiconductor device of example embodiments.

Referring to FIG. 16, the user's system 6000 may be used as computingsystems such as an ultra mobile PC (UMPC), a workstation, a net-book, apersonal digital assistant (PDA), a portable computer, a web tablet, awireless phone, a mobile phone, a smart phone, an e-book, a portablemulti media player (PMP), a portable game machine, a navigation, a blackbox, a digital camera, a digital multi media broadcasting (DMB) player,a digital audio recorder, a digital audio player, a digital picturerecorder, a digital picture player, a digital video recorder, a digitalvideo player, etc.

The user's system 6000 may include an application processor (AP) 6100, amain memory unit 6200, a storage unit 6300, a network unit 6400 and aninput/output (I/O) interface 6500. The application processor 6100 maydrive elements, an operating system, etc., in the user's system 6000.For example, the application processor 6100 may include controllers forcontrolling the elements in the user's system 6000 and interfaces.

The main memory unit 6200 may be an operational memory of the user'ssystem 6000. The main memory unit 6200 may be a buffer memory forcompensating a speed difference between the application processor 6100and the storage unit 6300. For example, the main memory unit 6200 may bea random access memory device such as a dynamic random access memory(DRAM), a synchronous DRAM (SDRAM), a static DRAM (SRAM), a double daterate (DDR) SDRAM, a DDR2 SDRAM, a DDR3 SDRAM, a phase changeable RAM(PRAM), a magnetic RAM (MRAM), a resistive RAM (RRAM), etc. The mainmemory unit 6200 may be operated based on the operations illustratedwith reference to FIGS. 2 to 10B.

The storage unit 6300 may store data. For example, the storage unit 6300may store the data received from an external device. The storage unit6300 may transmit the stored data to the application processor 6100. Thestorage unit 6300 may be a massive capacity type semiconductor memorydevice such as a dynamic random access memory (DRAM), a synchronous DRAM(SDRAM), a static DRAM (SRAM), a double date rate (DDR) SDRAM, a DDR2SDRAM, a DDR3 SDRAM, a phase changeable RAM (PRAM), a magnetic RAM(MRAM), a resistive RAM (RRAM), a NAND flash, a NOR flash, etc., or amassive capacity type magnetic disk device such as a hard disk drive.

The network unit 6400 may be communicated with the external devices. Thenetwork unit 6400 may aid a wireless communication such as code divisionmultiple access (CDMA), a global system for mobile communication (GSM),a wideband CDMA (WCDMA), a CDMA-2000, a time division multiple access(TDMA), a long term evolution (LTE), a Wimax, a WLAN, a UWB, a bluetooth, a WI-DI, etc.

The input/output interface 6500 may provide the user's system 6000 withan interface for inputting or outputting data or commands. Theinput/output interface 6500 may include a camera, a touch screen, amotion recognition module, a microphone, a display, a speaker, etc.

The above described embodiments of the present invention are intended toillustrate and not to limit the present invention. Various alternativesand equivalents are possible. The invention is not limited by theembodiments described herein. Nor is the invention limited to anyspecific type of semiconductor device. Other additions, subtractions, ormodifications are obvious in view of the present disclosure and areintended to fall within the scope of the appended claims.

What is claimed is:
 1. A semiconductor device comprising: a plurality ofmemory banks arranged in a first direction; an address decoder arrangedat one side of the memory banks; a plurality of local sense amplifierarrays, a corresponding one of which is arranged under each of thememory banks; a plurality of first input/output lines, a correspondingone of which is connected between a corresponding memory bank and itsassociated local sense amplifier array; and at least one secondinput/output line connected to the local sense amplifier arrays andextended in the first direction, wherein each of the memory bankscomprises: a plurality of MATs arranged in the first direction, the MATsincluding a plurality of memory cells; a plurality of normal senseamplifier arrays arranged between the MATs; and a plurality of edgesense amplifier arrays arranged on an uppermost MAT and a lowermost MATamong the MATs.
 2. The semiconductor device of claim 1, wherein theaddress decoder comprises a plurality of row decoders and a plurality ofcolumn decoders, and the row decoders and the column decoders arealternately arranged in the first direction.
 3. The semiconductor deviceof claim 2, wherein the plurality of row decoders are arranged at oneside of the MATs, and the plurality of column decoders are arranged atone side of the plurality of normal sense amplifier arrays and at oneside of the plurality of edge sense amplifier arrays.
 4. Thesemiconductor device of claim 3, further comprising a plurality ofcolumn selection signal lines extended on the normal sense amplifierarrays and the edge sense amplifier arrays in a second directionperpendicular to the first direction to transmit column selectionsignals outputted from the column decoders to the normal sense amplifierarrays and the edge sense amplifier arrays.
 5. The semiconductor deviceof claim 1, further comprising an input/output sense amplifier arrangedunder the memory banks to sense and amplify data transmitted through thesecond input/output line and to output the amplified data to an externaldevice.
 6. The semiconductor device of claim 5, wherein data read fromeach of the memory banks are transmitted to the local sense amplifierarray corresponding to each of the memory banks through the firstinput/output line, and the data transmitted to each of the local senseamplifier arrays are transmitted to the input/output sense amplifierthrough the second input/output lines.
 7. A semiconductor devicecomprising: a plurality of memory banks; and a plurality of local senseamplifier arrays, a corresponding one of which is arranged under each ofthe memory banks; wherein each of the plurality of memory banksincludes: a plurality of MATs including a plurality of memory cells, theMATs adjacent to each other in a first direction; a plurality of senseamplifier arrays arranged between the MATs, each of the sense amplifierarrays including a plurality of sense amplifiers; edge sense amplifierarrays arranged over an uppermost MAT and under a lowermost MAT amongthe MATs; and a plurality of column selection signal lines extended onthe first sense amplifier arrays in a second direction perpendicular tothe first direction to transmit column selection signals to the firstsense amplifiers.
 8. The semiconductor device of claim 7, furthercomprising: a plurality of segment input/output lines for receiving andoutputting data amplified by the sense amplifier in accordance withinputs of the column selection signals; and a plurality of localinput/output lines connected to the segment input/output lines through acontact and extended in the first direction to receive and output theamplified data outputted from the segment input/output lines.
 9. Thesemiconductor device of claim 8, wherein the segment input/output linesare extended on the sense amplifier arrays in the second direction. 10.The semiconductor device of claim 8, wherein each of the local senseamplifier arrays is arranged under the lowermost MAT of each of thememory banks to receive, amplify, and output the amplified dataoutputted from the local input/output lines.
 11. The semiconductordevice of claim 10, further comprising global input/output lines forreceiving the amplified data outputted from the local sense amplifierarrays and for outputting the received data to an input/output senseamplifier.
 12. The semiconductor device of claim 11, wherein the columnselection signal lines and the segment input/output lines are coplanarwith each other.
 13. The semiconductor device of claim 11, wherein thelocal input/output lines are arranged on a level higher than that onwhich the column selection signal lines and the segment input/outputlines are arranged, and the global input/output lines are arranged on alevel higher than that on which the local input/output lines arearranged.
 14. The semiconductor device of claim 7, wherein each of theedge sense amplifier arrays comprises: a detection amplifier for sensingand amplifying data; a pull-up controller for providing the detectionamplifier with a pull-up voltage; and a pull-down controller forproviding the detection amplifier with a pull-down voltage.
 15. Thesemiconductor device of claim 14, wherein the pull-down controllercomprises: a first pull-down controller for supplying a first pull-downvoltage to the detection amplifier in response to a first pull-downamplification activation signal; and a second pull-down controller forsupplying a second pull-down voltage to the detection amplifier inresponse to a second pull-down amplification activation signal.
 16. Thesemiconductor device of claim 15, wherein the first and second pull-downamplification activation signals are activated to a high level in anactive operation, and the first and second pull-down controllers supplythe first and second pull-down voltages to the detection amplifier. 17.The semiconductor device of claim 16, wherein the first pull-downamplification activation signal is maintained as the high level of theactivated state and the second pull-down amplification activation signalis inactivated to a low level when a first time is elapsed after theactive operation, and the first pull-down controller supplies the firstpull-down voltage to the detection amplifier and the second pull-downcontroller supplies the second pull-down voltage to the detectionamplifier.
 18. The semiconductor device of claim 17, wherein the firstpull-down amplification activation signal is inactivated to a low levelwhen a second time is elapsed after the first time, and the firstpull-down controller blocks the supplying of the first pull-down voltageto the detection amplifier.